Semiconductor device

Details Semiconductor device Semiconductor device

1992-08-27

1994-07-19

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257213, 257288, 257401, H01L 2702

Patent

active

053311922

ABSTRACT:
A semiconductor device includes plural transistors in which the transistors themselves share a gate and a channel region and posses three or more source and drain regions. In such a configuration, a drain current is determined by the voltage application condition (potential difference of all source and drain regions). Therefore, assuming one of the three source and drain regions to be a control terminal (disturbance terminal) instability or drift of the transistor operation may be intentionally produced by applying proper voltages to each of the three source and drain regions.

REFERENCES:
patent: 3803461 (1974-04-01), Beneking
patent: 3829883 (1974-08-01), Bate
patent: 4803533 (1989-02-01), Chang et al.
patent: 4816892 (1989-03-01), Temple
patent: 4821095 (1989-04-01), Temple
patent: 4845536 (1989-07-01), Heinecke et al.
patent: 4924277 (1990-05-01), Yamane et al.
patent: 4928156 (1990-05-01), Alvis et al.
patent: 4931408 (1990-06-01), Hshieh

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