Semiconductor device

Details Semiconductor device Semiconductor device

1997-07-11

1999-08-24

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, H01L 2976, H01L 2994

Patent

active

059427841

ABSTRACT:
A semiconductor device which achieves high-speed access and prevents the latch-up for any power inputting sequence by a plurality of power sources is disclosed. Where the chip voltage VDD is earlier inputted, an N well bias circuit 9 and a P well bias circuit 10 are activated, and an N-type well 12 and a P-type well 13 are biased respectively. After that, although the interface voltage VDDQ is inputted, the latch-up is not generated. On the other hand, where the interface voltage VDDQ is earlier inputted to a terminal 8, the N well bias circuit 9 and the P well bias circuit 10 are activated through a bypass circuit 15, and the N-type well 12 and the P-type well 13 are biased. Accordingly, although the chip voltage VDD is inputted after that, the latch-up is not generated.

REFERENCES:
patent: 4088905 (1978-05-01), Comer
patent: 5253197 (1993-10-01), Suzuki et al.

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