Semiconductor device

Details Semiconductor device Semiconductor device

1995-08-04

1996-12-10

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257344, 257409, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

055833640

ABSTRACT:
A semiconductor device improved not to form a parasitic gate overlap capacitance in a drain side of an MOS transistor. A first gate electrode and a second gate electrode are provided on a semiconductor substrate. A common drain electrode is provided between first gate electrode and second gate electrode in a main surface of silicon substrate. Common drain region includes a high concentration impurity region and a pair of low concentration impurity regions. Outer edges of low concentration impurity regions are located coplanar with a side surface of gate electrodes.

REFERENCES:
patent: 4804637 (1989-02-01), Smayling et al.
patent: 5327000 (1994-07-01), Miyata et al.

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