Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1986-01-24
1987-11-17
Kittle, John E.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG70, 156DIG103, 148DIG41, 148DIG59, C03B 2300
Patent
active
047072164
DESCRIPTION:
DESCRIPTION
GaAs buffer layer 312 and an n-type GaAs channel layer 313. Source, gate and drain electrodes 316, 317 and 318, respectively, are applied in conventional manner.
The bipolar transistor of FIG. 4 and the light emitting diode of FIG. 5 can also be fabricated in substantially conventional manner, except that the silicon substrate and initial GaAs deposition are implemented consistent with the teachings hereof. In FIG. 4 the high resistivity p-type silicon substrate 411 and gallium arsenide buffer layer 412 have further deposited thereon the layers 413, 414 and 415 which are, respectively, an n-type GaAs collector, a p-type GaAs base, and an N-type GaAs emitter. Metal collector, base and emitter contacts 423, 424 and 425 are respectively applied to their associated layers.
In the light emitter of FIG. 5, a p-type silicon substrate 511 and a p-type gallium arsenide buffer layer 512 have deposited thereon a p-type GaAs layer 513 and then an n-type GaAs layer 514. Metal electrodes 521 and 522 are applied to opposing ends of the device and are typically light-transmissive. Again, it will be understood that the simplified representations set forth are to illustrate the types of devices that can be fabricated using substrates prepared and processed in accordance with the invention, and it will be understood that variations on these devices, for example to implement a laser, can readily be made, as is well known in the art.
The invention has been described with reference to particular preferred embodiments, but variations within the spirit and scope of the invention will occur to those skilled in the art. For example, while GaAs-on-Si has been featured and is important, the technique has application to many other material systems and operating conditions.
1. A method of forming a layer of semiconductor material of improved quality, comprising the steps of: {100} crystallographic surface tilted in the <001> direction; and material over said surface to obtain a layer of said semiconductor material.
2. The method as defined by claim 1, wherein said different single crystalline semiconductor material is a III-V semiconductor.
3. The method as defined by claim 1, wherein said epitaxial depositing step is performed by molecular beam epitaxy.
4. The method as defined by claim 2, wherein said epitaxial depositing step is performed by molecular beam epitaxy.
5. A method of forming a layer of gallium arsenide of improved quality, comprising the steps of: crystallographic surface tilted by at least 2.29 degrees in the <001> direction; obtain a layer of gallium arsenide.
6. The method as defined by claim 5, further comprising the steps of epitaxially depositing intervening strained layers of III-V semiconductor material between said arsenic prelayer and said layer of gallium arsenide.
7. The method as defined by claim 5, wherein said epitaxial depositing steps are performed by molecular beam epitaxy.
8. The method as defined by claim 6, wherein said epitaxial depositing steps are performed by molecular beam epitaxy.
9. The method as defined by claim 1, wherein said substrate is silicon, and said different single cyrstalline semiconductor material is gallium arsenide.
REFERENCES:
Hollan, L. and C. Schiller, "Difference Between the (001) Facet and the Vicinal Planes in Vapour Phase Epitaxial Growth of GaAs", Journal of Crystal Growth, 22 (1974), 175-180.
Matthews, J. W. and A. E. Blakeslee, "Defects in Epitaxial Multilayers", Journal of Crystal Growth 29 (1975), 273-280.
Morizane, Kenji, "Antiphase Domain Structures in GaP and GaAs Epitaxial Layers Grown on Si and Ge", Journal of Crystal Growth 38 (1977), 249-254.
Petroff, P. M., A. C. Gossard, A. Savage and W. Weigmann, "Molecular Beam Epitaxy of Ge and Ga.sub.1-x Al.sub.x As Ultra Thin Film Superlattices", Journal of Crystal Growth 46 (1979), 172-178.
Kaplan, Ray "Leed Study of the Stepped Surface of Vicinal Si(100)", Surface Science 93 (1980), 145-158.
Miller, D. L. and J. S. Harris, Jr., "Molecular Beam Epitaxial GaAs Heteroface Solar Cell Grown on Ge", Appl. Phys. Lett. 37 (12), Dec. 15, 1980, 1104-1106.
Aspnes, D. E. and A. A. Studna, "Chemical Etching and Cleaning Procedures for Si, Ge, and Some III-V Compound Semiconductors", Appl. Phys. Lett. 39 (4), Aug. 15, 1981, 316-318.
Wright, Steven L., Masanori Inada, and Herbert Kroemer, "Polar-on-Nonpolar Epitaxy: Sublattice Ordering in the Nucleation and Growth of GaP on Si(211) Surfaces", J. Vac. Sci. Technol. 21 (2), Jul./Aug. 1982, 534-539.
Wright, Steven L., Herbert Kroemer, and Masanori Inada, "Molecular Beam Epitaxial Growth of GaP on Si", J. Appl. Phys. 55 (8), Apr. 15, 1984, 2916-2927.
Christou, A., E. D. Richmond, B. R. Wilkins, and A. R. Knudson, "Surface Treatment of (1102) Sapphire and (100) Silicon for Molecular Beam Epitaxial Growth", Appl. Phys. Lett. 44 (8), Apr. 15, 1984, 796-798.
Fletcher, Robert M., D. Ken Wagner, and Joseph M. Ballantyne, "GaAs Ligh-Emitting Diodes Fabricated on Ge-Coated Si Substrates", Appl. Phys. Lett. 44 (10), May 15, 1984, 967-969.
Wang, W. I., "Molecular Beam Epitaxial Growth and Material Properties of GaAs and AlGaAs and AlGaAs on Si(100)", Appl. Phys. Lett. 44(12), Jun. 15, 1984, 1149-1151.
Sheldon, P. and K. M. Jones; R. E. Hays, B-Y. Tsaur and John C. C. Fann, "Growth and Patterning of GaAs/Ge Single Crystal Layers on Si Substrates by Molecular Beam Epitaxy", Appl. Phys. Lett. 45 (3), Aug. 1, 1984, 274-276.
Fischer, R., T. Henderson, J. Klem, W. T. Masselink, W. Kopp, H. Morkoc, and C. W. Litton, "Characteristics of GaAs/AlGaAs MODFETs Grown Directly on (100) Silicon", Electronics Letters 20 (22), Oct. 25, 1984, 945-947.
Fischer, R.; J. Klem, T. Henderson, W. T. Masselink, W. Kopp, and H. Morkoc, "GaAs/AlGaAs MODFET's Grown on (100) Ge", IEEE Electron Device Letters, Vol. EDL-5, No. 11, Nov. 1984, 456-457.
Metze, G. M., H. K. Choi, and B-Y. Tsaur, "Metal-Semiconductor Field-Effect Transistors Fabricated in GaAs Layers Grown Directly on Si Substrates by Molecular Beam Epitaxy", Appl. Phys. Lett. 45 (10), Nov. 15, 1984, 1107-1109.
Mazur, J. H., J. Washburn, T. Henderson, J. Klem, W. T. Masselink, R. Fischer, and H. Morkoc, "TEM Investigation of Polar-on-Nonpolar Epitaxy: GaAs-AlGaAs on (100) Ge", Presented at the Materials Research Society Meeting, Boston, MA, Nov. 26-30, 1984.
Masselink, W. T., T. Henderson, J. Klem, R. Fischer, P. Pearah, and H. Morkoc; M. Hafich, P. D. Wang, and G. Y. Robinson, "Optical Properties of GaAs on (100) Si Using Molecular Beam Epitaxy", Appl. Phys. Lett. 45 (12), Dec. 15, 1984, 1309-1311.
Mazur, J. H., J. Washburn, T. H
This invention was made with Government support under Contract F49620-83-K-0021 awarded by the United States Air Force. The Government has certain rights in this invention.
Fischer Russ
Morkoc Hadis
Kittle John E.
Ryan Patrick J.
University of Illinois
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