Semiconductor decoupling capacitor

Details Semiconductor decoupling capacitor Semiconductor decoupling capacitor

2005-09-30

2010-06-22

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S307000, C257S311000, C257SE27094, C257SE29343

Reexamination Certificate

active

07741670

ABSTRACT:
A semiconductor capacitor that includes a plurality of overlapping conductive layers and a field-effect transistor. The plurality of conductive layers include a first and second conductive layers that are spaced apart to creating a capacitance between the plurality of layers. In the semiconductor capacitor, the FET has a source, a drain and a gate. When the FET is in conduction mode, a capacitance is created between the gate and the conductive path in the semiconductor substrate between the source and the drain. The semiconductor capacitor's total capacitance is increased by coupling the drain and the source to the first conductive layer and coupling the gate to the second conductive layer.

REFERENCES:
patent: 4449142 (1984-05-01), Tsuchiya et al.
patent: 5148393 (1992-09-01), Furuyama
patent: 6146939 (2000-11-01), Dasgupta
patent: 6693316 (2004-02-01), Tanaka et al.

Affiliated with

Also associated with

Rating

Semiconductor decoupling capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor decoupling capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor decoupling capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4188084