Semiconductor crystal growth via variable melt rotation

Details Semiconductor crystal growth via variable melt rotation Semiconductor crystal growth via variable melt rotation

1986-04-28

1987-04-21

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156622, 156618, 156605, 422249, C30B 1530, C30B 3500, C30B 1324, C30B 1330

Patent

active

046594230

ABSTRACT:
An improvement in the method and apparatus for growing a semiconductor crystal by the Czochralski technique comprising the steps of applying a rotating transverse magnetic field to molten semiconductor material held in a crucible during the seed crystal pulling and crystal formation step, to cause the molten material to rotate within the crucible, and simultaneously increasing the rotational velocity of the magnetic field during this crystal formation as a function of the length of the crystal pulled from said molten material to thereby vary the rotation rate of the molten material. These steps result in the uniform axial distribution of oxygen in the crystal.

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