Semiconductor crystal growing method

Details Semiconductor crystal growing method Semiconductor crystal growing method

1995-03-28

1997-08-12

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

437 89, 437 90, 437 84, 437107, 437133, 438925, 117104, 117954, H01L 2120

Patent

active

056565402

ABSTRACT:
On a surface of a p-type GaAs (111)B substrate 11, a mesa groove is formed along a [211]A direction. TDMAAs as a group V material and TMGa as a group III material are supplied at 8.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow n-type GaAs 13 dominantly on a side surface of a mesa 12. Subsequently, the group V material is changed to metal As. As.sub.4 and MAGa are supplied at 5.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow p-type GaAs 14 only on a side surface of the GaAs 13. Then, the group V material is again changed to TDMAAs. TDMAAs and TMGa are supplied both at 8.times.10.sup.-4 Pa to grow p-type GaAs 15.

REFERENCES:
patent: 4788159 (1988-11-01), Smith
patent: 4891013 (1990-01-01), Smith
patent: 5300185 (1994-04-01), Hori et al.
patent: 5300186 (1994-04-01), Kitahara et al.
patent: 5475213 (1995-12-01), Fujii et al.
patent: 5545509 (1996-08-01), Cameron et al.
A. Okamoto and K. Ohata, "Selective epitaxial growth of gallium arsenide by molecular beam epitaxy", Appl. Phys. Lett., vol. 51, No. 19, Nov. 9, 1987, pp.1512-1514.
H. Heinecke et al., "Selective Growth of GaAs in the Mombe and MOCVD Systems", Journal of Crystal Growth, vol. 77, 1986, pp. 303-309.
T. Fukui et al., "Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition", Appl. Phys. Lett., vol. 57, No. 12, Sep. 17, 1990, pp. 1209-1211.

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