Semiconductor crystal film and method for preparation thereof

Details Semiconductor crystal film and method for preparation thereof Semiconductor crystal film and method for preparation thereof

2005-02-08

2005-02-08

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S047000, C438S094000, C438S172000, C438S191000, C257S011000, C257S015000, C257S018000, C257S019000, C257S063000

Reexamination Certificate

active

06852602

ABSTRACT:
A multi-layer film10is formed by stacking a Si1-x1-y1Gex1Cy1layer (0≦x1<1 and 0<y1<1) having a small Ge mole fraction, e.g., a Si0.785Ge0.2C0.015layer13, and a Si1-x2-y2Gex2Cy2layer (0<x2≦1 and 0≦y2<1) (where x1<x2 and y1>y2) having a high Ge mole fraction, e.g., a Si0.2Ge0.8layer12. In this manner, the range in which the multi-layer film serves as a SiGeC layer with C atoms incorporated into lattice sites extends to high degrees in which a Ge mole fraction is high.

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