Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-05-09
2006-05-09
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S684000, C438S704000, C438S638000
Reexamination Certificate
active
07041605
ABSTRACT:
The present invention provides a semiconductor contact structure and a method of forming the same. An interlayer dielectric is patterned to form a contact hole that exposes a predetermined region of conductive material on a semiconductor substrate. A recess is formed in the conductive material exposed by the contact hole and undercuts the walls that define the sides of the contact hole such that the recess is wider than the contact hole. A contact plug fills the recess as well as the contact hole. The contact plug is maintained in position stably atop the underlying conductive material because the lower part of the contact plug is wider than the upper part of the contact plug. Accordingly, the contact plug will not fall over even if the interlayer dielectric reflows during a subsequent process.
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Nguyen Ha Tran
Samsung Electronics Co,. Ltd.
Volentine Francos & Whitt PLLC
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