Semiconductor constructions of memory devices with different...

Details Semiconductor constructions of memory devices with different... Semiconductor constructions of memory devices with different...

2011-05-24

2011-05-24

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257S333000, C257SE29201, C257SE29260

Reexamination Certificate

active

07948030

ABSTRACT:
Some embodiments include methods of recessing multiple materials to a common depth utilizing etchant comprising C4F6and C4F3. The recessed materials may be within isolation regions, and the recessing may be utilized to form trenches for receiving gatelines. Some embodiments include structures having an island of semiconductor material laterally surrounded by electrically insulative material. Two gatelines extend across the insulative material and across the island of semiconductor material. One of the gatelines is recessed deeper into the electrically insulative material than the other.

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