Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-01
2011-03-01
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21409
Reexamination Certificate
active
07898019
ABSTRACT:
Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate. Some embodiments include utilization of an etch comprising HBr and O2to extend a pattern through a carbon-containing layer. The patterned carbon-containing layer may be used to pattern NAND cell unit gates. Some embodiments include structures having a patterned carbon-containing layer defining a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate.
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Keller David J.
Schrinsky Alex J.
Zhu Hongbin
Lee Hsien-Ming
Micro)n Technology, Inc.
Parendo Kevin
Wells St. John P.S.
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