Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-04-06
2009-06-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23154
Reexamination Certificate
active
07550848
ABSTRACT:
The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a portion of a semiconductor substrate, particles are adhered to the first monolayer, and a second monolayer is formed over the particles. Another aspect of the invention includes a construction containing a semiconductor substrate and a particle-impregnated conductive material over at least a portion of the semiconductor substrate. The particle-impregnated conductive material can include tungsten-containing particles within a layer which includes tantalum or tungsten.
REFERENCES:
patent: 4087778 (1978-05-01), Merz et al.
patent: 4609903 (1986-09-01), Toyokura et al.
patent: 5998824 (1999-12-01), Lee
patent: 6207487 (2001-03-01), Kim et al.
patent: 6303516 (2001-10-01), Morita et al.
patent: 6444495 (2002-09-01), Leung et al.
patent: 6508561 (2003-01-01), Alie et al.
patent: 6730596 (2004-05-01), Fukunaga et al.
patent: 6924523 (2005-08-01), Aochi et al.
patent: 6951816 (2005-10-01), Nopper et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2002/0137260 (2002-09-01), Leung et al.
patent: 2002/0150687 (2002-10-01), Matsuba
patent: 2003/0026989 (2003-02-01), George et al.
patent: 2003/0224104 (2003-12-01), Fukunaga et al.
patent: 2004/0043577 (2004-03-01), Hill
patent: 2004/0191698 (2004-09-01), Yagi et al.
Frank, M. et al., “Enhanced Initial Growth of Atomic-Layer-Deposited Metal Oxides on Hydrogen-Terminated Silicon”, App. Phys. Let., vol. 83, No. 4, Jul. 28, 2003, pp. 740-742.
Rosidian. A.. et al., “Formation of Ultrahard Metal Oxide Nanocluster Coatings at Room Temperature by Electrostatic Self-Assembly”, SPIE vol. 3675 (1999), pp. 113-119.
Sakaue, H. et al., “Conformable CVD of SiO2into Deep Trench Using the Digital Method”, Extended Abstracts of the 22nd (1990 International) Conf. on Solid State Devices and Materials, Sendai (1990), pp. 921-924.
Mountziaris, T. et al., “Gas-Phase and Surface Chemistry in Electronic Materials Processing”, Materials Research Society Symposium Proceedings, vol. 334, held Nov. 29,1993-Dec. 2, 1993, Boston, MA, pp. 1-36.
Perez, I. et al., “Fabrication and Characterization of 4H-SiC MOS Capacitors with Atomic Layer Deposited (ALD) SiO2”, IEEE Jul. 2000, pp. 144-147.
Sakaue, H. et al., “Digital Chemical Vapor Deposition of SiO2Using a Repetitive Reaction of Triethylsilane/Hydrogen and Oxidation”, JP Journal of App. Phys., vol. 70, No. 1B, Jan. 1991, pp. L 124-L 127.
Klaus, J. et al., “Atomic Layer Deposition of SiO2at Room Temperature Using NH3-Catalyzed Sequential Surface Reactions”, Surface Science 447 (2000), pp. 81-90.
Cameron, M. et al., “Atomic Layer Deposition of SiO2and TiO2in Alumina Tubular Membranes: Pore Reduction and Effect of Surface Species on Gas Transport”, Langmuir 2000, 16, pp. 7435-7444.
Horiike, Y. et al., “Filling of Si Oxide into a Deep Trench Using Digital CVD Method”, App. Surface Science 46, (1990), pp. 168-174.
Wise, M. et al., “Diethyldiethoxysilane as a New Precursor for SiO2Growth on Silicon”, Mat. Res. Soc. Symp. Proc. vol. 334, (© 1994 Materials Research Society), pp. 37-43.
Klaus, J.W. et al., “Atomic Layer Deposition of SiO2Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions”, Surface Review and Letters, vol. 6, Nos. 3 & 4 (1999), © World Scientific Pub. Co., pp. 435-448.
Derderian Garo J.
Sandhu Gurtej S.
Micro)n Technology, Inc.
Pert Evan
Quinto Kevin
Wells St. John P.S.
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