Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-04-28
2010-12-14
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257SE29255, C257SE27062
Reexamination Certificate
active
07851869
ABSTRACT:
The invention includes methods of forming PMOS transistors and NMOS transistors. The NMOS transistors can be formed to have a thin silicon-containing material between a pair of metal nitride materials, while the PMOS transistors are formed to have the metal nitride materials directly against one another. The invention also includes constructions which contain an NMOS transistor gate stack having a thin silicon-containing material between a pair of metal nitride materials. The silicon-containing material can, for example, consist of silicon, conductively-doped silicon, or silicon oxide; and can have a thickness of less than or equal to about 30 angstroms.
REFERENCES:
patent: 5665615 (1997-09-01), Anmo
patent: 6265292 (2001-07-01), Parat et al.
Ananthan Venkatesan
Ramaswamy D. V. Nirmal
Harrison Monica D
Micro)n Technology, Inc.
Monbleau Davienne
Wells St. John P.S.
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