Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-18
2008-03-18
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000
Reexamination Certificate
active
11389632
ABSTRACT:
The invention includes a method of forming a planarized surface over a semiconductor substrate. A substrate is provided which includes a memory array region and a peripheral region proximate the memory array region. The memory array region has a higher average elevational height than the peripheral region. Polysilazane is formed over the memory array region and over the peripheral region. The polysilazane is densified. A material is formed over the polysilazane. The material is planarized while using the densified polysilazane as a stop. The planarization forms a planarized surface which extends over the memory array and peripheral regions. The planarized surface comprises both the densified polysilazane and the material.
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Le Thao P.
Micro)n Technology, Inc.
Wells St. John P.S.
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