Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-02
2008-09-02
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21646, C257SE29346, C438S243000
Reexamination Certificate
active
11188050
ABSTRACT:
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
REFERENCES:
patent: 4517729 (1985-05-01), Batra
patent: 5236860 (1993-08-01), Fazan et al.
patent: 5340763 (1994-08-01), Dennison
patent: 5401681 (1995-03-01), Dennison et al.
patent: 5467305 (1995-11-01), Bertin et al.
patent: 5498562 (1996-03-01), Dennison et al.
patent: 5532089 (1996-07-01), Adair et al.
patent: 5604696 (1997-02-01), Takaishi
patent: 5605857 (1997-02-01), Jost et al.
patent: 5652164 (1997-07-01), Dennison et al.
patent: 5654222 (1997-08-01), Sandhu et al.
patent: 5686747 (1997-11-01), Jost et al.
patent: 5702990 (1997-12-01), Jost et al.
patent: 5705838 (1998-01-01), Jost et al.
patent: 5767561 (1998-06-01), Frei et al.
patent: 5821140 (1998-10-01), Jost et al.
patent: 5869382 (1999-02-01), Kubota et al.
patent: 5900660 (1999-05-01), Jost et al.
patent: 5955758 (1999-09-01), Sandhu et al.
patent: 5981350 (1999-11-01), Geusic et al.
patent: 5990021 (1999-11-01), Prall et al.
patent: 6037212 (2000-03-01), Chao
patent: 6037218 (2000-03-01), Dennison et al.
patent: 6059553 (2000-05-01), Jin et al.
patent: 6090700 (2000-07-01), Tseng
patent: 6108191 (2000-08-01), Bruchhaus
patent: 6110774 (2000-08-01), Jost et al.
patent: 6133620 (2000-10-01), Uochi
patent: 6180450 (2001-01-01), Dennison
patent: 6204143 (2001-03-01), Roberts et al.
patent: 6204178 (2001-03-01), Marsh
patent: 6258650 (2001-07-01), Sunouchi
patent: 6274497 (2001-08-01), Lou
patent: 6303518 (2001-10-01), Tian et al.
patent: 6303956 (2001-10-01), Sandhu et al.
patent: 6323528 (2001-11-01), Yamazaki et al.
patent: 6331461 (2001-12-01), Juengling
patent: 6372554 (2002-04-01), Kawakita et al.
patent: 6383861 (2002-05-01), Gonzalez et al.
patent: 6399490 (2002-06-01), Jammy et al.
patent: 6403442 (2002-06-01), Reinberg
patent: 6432472 (2002-08-01), Farrell et al.
patent: 6458653 (2002-10-01), Jang
patent: 6458925 (2002-10-01), Fasano
patent: 6459138 (2002-10-01), Reinberg
patent: 6617222 (2003-09-01), Coursey
patent: 6645869 (2003-11-01), Chu et al.
patent: 6656748 (2003-12-01), Hall et al.
patent: 6667502 (2003-12-01), Agarwal et al.
patent: 6673693 (2004-01-01), Kirchhoff
patent: 6709978 (2004-03-01), Geusic et al.
patent: 6720232 (2004-04-01), Tu et al.
patent: 6767789 (2004-07-01), Bronner et al.
patent: 6784112 (2004-08-01), Arita et al.
patent: 6812513 (2004-11-01), Geusic et al.
patent: 6822261 (2004-11-01), Yamazaki
patent: 6844230 (2005-01-01), Reinberg
patent: 6849496 (2005-02-01), Jaiprakash et al.
patent: 6897109 (2005-05-01), Jin et al.
patent: 6927122 (2005-08-01), Geusic et al.
patent: 6930640 (2005-08-01), Chung
patent: 7042040 (2006-05-01), Horiguchi
patent: 7064365 (2006-06-01), An et al.
patent: 7073969 (2006-07-01), Kamm
patent: 7074669 (2006-07-01), Iijima et al.
patent: 7081384 (2006-07-01), Birner et al.
patent: 7084451 (2006-08-01), Forbes et al.
patent: 7125781 (2006-10-01), Manning
patent: 7160788 (2007-01-01), Sandhu et al.
patent: 7179706 (2007-02-01), Patraw et al.
patent: 7199005 (2007-04-01), Sandhu et al.
patent: 7202127 (2007-04-01), Busch et al.
patent: 2001/0012223 (2001-08-01), Kohyama
patent: 2001/0026974 (2001-10-01), Reinberg
patent: 2001/0044181 (2001-11-01), Nakamura
patent: 2002/0022339 (2002-02-01), Kirchhoff
patent: 2002/0030221 (2002-03-01), Sandhu et al.
patent: 2002/0039826 (2002-04-01), Reinberg
patent: 2002/0086479 (2002-07-01), Reinberg
patent: 2002/0090779 (2002-07-01), Jang
patent: 2002/0098654 (2002-07-01), Durcan et al.
patent: 2002/0153589 (2002-10-01), Oh
patent: 2002/0153614 (2002-10-01), Ema et al.
patent: 2002/0163026 (2002-11-01), Park
patent: 2003/0085420 (2003-05-01), Ito et al.
patent: 2003/0153146 (2003-08-01), Won et al.
patent: 2003/0178684 (2003-09-01), Nakamura
patent: 2003/0190782 (2003-10-01), Ko et al.
patent: 2003/0227044 (2003-12-01), Park
patent: 2004/0018679 (2004-01-01), Yu et al.
patent: 2004/0056295 (2004-03-01), Agarwal et al.
patent: 2004/0150070 (2004-08-01), Okada et al.
patent: 2004/0188738 (2004-09-01), Famworth et al.
patent: 2005/0051822 (2005-03-01), Manning
patent: 2006/0014344 (2006-01-01), Manning
patent: 2006/0024958 (2006-02-01), Ali
patent: 2006/0046420 (2006-03-01), Manning
patent: 2006/0063344 (2006-03-01), Manning
patent: 2006/0063345 (2006-03-01), Manning
patent: 2006/0115951 (2006-06-01), Mosley
patent: 2006/0186451 (2006-08-01), Dusberg et al.
patent: 2006/0211211 (2006-09-01), Sandhu et al.
patent: 2006/0261440 (2006-11-01), Manning
patent: 2006/0263968 (2006-11-01), Manning
patent: 2007/0032014 (2007-02-01), Sandhu et al.
patent: 2007/0048976 (2007-03-01), Raghu
patent: 2007/0099328 (2007-05-01), Chiang et al.
patent: 2007/0145009 (2007-06-01), Fucsko et al.
patent: 4447804 (2002-01-01), None
patent: 20010061020 (2001-07-01), None
patent: 20010114003 (2001-12-01), None
patent: 2004/027898 (2004-08-01), None
patent: 2004/040252 (2004-12-01), None
patent: WO 2005/024936 (2005-03-01), None
US2004/027898, Aug. 2004, PCT Written Opinion.
US06/06806, Feb. 2006, IPER.
Rana, et al., U.S. Appl. 11/360,540, filed Feb. 23, 2006.
Raghu, et al. U.S. Appl. No. 11/580,418, filed Oct. 11, 2006.
Li, X and Bohn, P.W.; “Metal-assisted chemical etching in HF/H2O2produces porous silicon” American Institute of Physics, vol. 77, No. 16, Oct. 16, 2000.
Banhart,Aluminum Foams: On the Road to Real Applications, MRS Bulletin, pp. 290-298, (Apr. 2003).
Gibson et al.,Cellular Solids, MRS Bulletin, pp. 270-274 (Apr. 2003).
Green et al.,Cellular Ceramics: Intriguing Structures, Novel Properties, and Innovative Applications, MRS Bulletin, pp. 296-300 (Apr. 2003).
U.S. Appl. No. 10/928,931, filed Aug. 27, 2004, Busch et al.
U.S. Appl. No. 10/929,037, filed Aug. 27, 2004, Manning.
Green et al.,The Structure and Applications of Cellular Ceramics, Web Extra, 10 pages (Apr. 2003).
Karp et al.,Scaffolds for Tissue Engineering, MRS Bulletin, pp. 301-306 (Apr. 2003).
Kraynik,Foam Structure: Foam Soap Froth to Solid Foams, MRS Bulletin, pp. 275-276 (Apr. 2003).
Maire et al.,In Situ X-Ray Tomography Measurements of Deformation in Cellular Solids, MRS Bulletin, pp. 284-289 (Apr. 2003).
Oh et al.,Preparation and Pore-Characteristics Control of Nano-Porous Materials Using Organometallic Building Blocks, 4 Carbon Science, No. 1, pp. 1-9 (Mar. 2003).
Onck,Scale Effects in Cellular Metals, MRS Bulletin, pp. 279-283 (Apr. 2003).
Park et al.,Block Copolymer Lithography: Periodic Arrays of ˜ 1011Holes in 1 Square Centimeter, 276 Science, pp. 1401-1404 (May 30, 1997).
Tsukada et al.,Preparation and Applications of Porous Silk Fibroin Materials, 54 Journal of Applied Polymer Science, pp. 507-514 (1994).
U.S. Appl. No. 11/006,331, filed Dec. 6, 2004, Basceri et al.
Park et al. “Novel Robust Cell Capacitor (Leaning Exterminated Ring Type Insulator) And New Storage Node Contact (Top Spacer Contact) For 70nm DRAM Technology and Beyond”, 2004 Symposium on VLSI Digest of Technical Papers; Jul. 2004; pp. 34-35.
O'Sullivan, J. et al.,The Morphology and Mechanism of Formation of Porous Anodic Films on Aluminum,Proc. Roy. Soc. Lond.A, vol. 317, pp. 511-543 (1970).
Shingubara, S.,Fabrication of Nanomaterials using Porous Alumina
Graettinger Thomas M.
Manning H. Montgomery
Pontoh Marsela
Micro)n Technology, Inc.
Taylor Earl N
Vu David
Wells St John PS
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