Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29300
Reexamination Certificate
active
07977727
ABSTRACT:
Some embodiments include methods of reflecting ions off of vertical regions of photoresist mask sidewalls such that the ions impact foot regions along the bottom of the photoresist mask sidewalls and remove at least the majority of the foot regions. In some embodiments, trenches may be formed adjacent the photoresist mask sidewalls in a material that is beneath the photoresist mask. Another material may be formed to have projections extending into the trenches. Such projections may assist in anchoring said other material to the material that is beneath the photoresist mask. In some embodiments, the photoresist mask is utilized for patterning flash memory structures. Some embodiments include semiconductor constructions having materials anchored to underlying materials through fang-like projections.
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Micro)n Technology, Inc.
Shook Daniel
Smith Matthew
Wells St. John P.S.
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