Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-07-20
1994-11-08
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257467, 257469, 257470, H01L 2978, H01L 2356, H01L 2702, H01L 2708
Patent
active
053629809
ABSTRACT:
A semiconductor component is formed by an insulated gate field effect device having a semiconductor body with a first region of one conductivity type adjacent one major surface, a second region defining a conduction channel area separating a third region from the first region, an insulated gate adjoining the conduction channel area for controlling current flow between the first and third regions and an injection region for injecting opposite conductivity type charge carriers into the first region, and a protection device for limiting the current through the insulated gate field effect device. The protection device is formed by a fourth region of the opposite conductivity type formed within the first region, a fifth region separated from the first region by the fourth region, a first conductive path connecting the fifth region to the insulated gate for allowing the flow of one conductivity type charge carriers towards the insulated gate and a second conductive path connected to the fourth region. An area of the fourth region beneath the fifth region provides a route for opposite conductivity type charge carriers to the second conductive path for causing, when the current through the insulated gate field effect device exceeds a predetermined limit, the pn junction between the fourth and first region to become forward biassed thereby causing the voltage at the insulated gate to alter so as to limit the current through the insulated gate field effect device.
REFERENCES:
patent: 4760434 (1988-07-01), Tsuzuki et al.
patent: 5235201 (1993-08-01), Honna
Abraham Fetsum
Miller Paul R.
Sikes William L.
U.S. Philips Corporation
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