Semiconductor component with linear current to voltage character

Details Semiconductor component with linear current to voltage character Semiconductor component with linear current to voltage character

1997-07-25

1999-03-23

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, H01L 2712

Patent

active

058863842

ABSTRACT:
A semiconductor device has a linear current-to-voltage characteristic through the origin of coordinates and additionally a bi-directional structure. The typical device contains an oxide layer on top of a p.sup.- doped substrate. On top of this oxide layer a n-type drift region is created which forms a longitudinal n-drift region. The n-drift region comprises at each end a low doped p-type well which has a portion with strongly doped p.sup.+ semiconductor material which will constitute contacting to either a source or a drain electrode. Each p-type well additionally contains a n.sup.+ area and additionally on top of said p-type well a gate electrode, whereby the n.sup.+ doped area is positioned in the p-well between a gate and a drain electrode or a gate and a source electrode, respectively. Thus a bi-directional double DMOS structure is created having a common drift region.

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