Semiconductor component with increased dielectric strength...

Details Semiconductor component with increased dielectric strength... Semiconductor component with increased dielectric strength...

2006-08-15

2006-08-15

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S139000, C257S141000, C257S341000, C257S342000, C257S343000, C257S347000, C257S401000

Reexamination Certificate

active

07091557

ABSTRACT:
The invention relates to a semiconductor component having a first semiconductor zone of a first conduction type, a second semiconductor zone of a second conduction type and a drift zone arranged between the first and second semiconductor zones, which drift zone has at least two semiconductor zones doped complementarily to one another, the degree of compensation varying at least in a section of the drift zone in a direction perpendicular to a current flow direction running between the first and second semiconductor zones.

REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 6097063 (2000-08-01), Fujihira
patent: 2003/0207536 (2003-11-01), Miyasaka et al.
patent: 198 40 032 (1999-11-01), None
patent: 102 55 830 (2004-06-01), None

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