Semiconductor component with enhanced avalanche ruggedness

Details Semiconductor component with enhanced avalanche ruggedness Semiconductor component with enhanced avalanche ruggedness

2005-01-04

2005-01-04

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S329000, C257S339000, C257S129000, C257S135000, C257S136000, C257S491000, C257S492000

Reexamination Certificate

active

06838729

ABSTRACT:
The invention relates to a semiconductor component with enhanced avalanche ruggedness. At the nominal current of this semiconductor component, in the event of an avalanche the voltage applied between two electrodes is 6 % or more above the static reverse voltage at the same temperature.

REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 5216275 (1993-06-01), Chen
patent: 5438215 (1995-08-01), Tihanyi
patent: 198 40 032 (1999-11-01), None

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