Semiconductor component with cell structure and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S327000, C257S329000, C257SE21410, C257SE21629

Reexamination Certificate

active

08067796

ABSTRACT:
A semiconductor component comprises a semiconductor body comprising a first component electrode arranged on one of the surfaces of the semiconductor body, a second component electrode arranged on one of the surfaces of the semiconductor body, and a component control electrode arranged on one of the surfaces of the semiconductor body. In this case, active semiconductor element cells are arranged in a first active cell array of the semiconductor body, the semiconductor element cells comprising a first cell electrode, a second cell electrode and a cell control electrode and also a drift path between the cell electrodes. At least the component control electrode is arranged on a partial region of the semiconductor body and a second active cell array is additionally situated in the partial region of the semiconductor body below the component control electrode.

REFERENCES:
patent: 6414404 (2002-07-01), Allen
patent: 6870201 (2005-03-01), Deboy et al.
patent: 7619280 (2009-11-01), Cao et al.
patent: 2001/0023957 (2001-09-01), Warwick
patent: 2003/0178676 (2003-09-01), Henninger et al.
patent: 2003/0222297 (2003-12-01), Krumrey et al.
patent: 2005/0017291 (2005-01-01), Hirler
patent: 2006/0124995 (2006-06-01), Ninomiya et al.
patent: 2006/0273385 (2006-12-01), Hshieh
patent: 2007/0210410 (2007-09-01), Hirler et al.
patent: 2008/0067584 (2008-03-01), Lui et al.

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