Semiconductor component with a high-voltage endurance edge struc

Details Semiconductor component with a high-voltage endurance edge struc Semiconductor component with a high-voltage endurance edge struc

1998-09-18

2000-03-14

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257170, 257409, 257494, 257401, H01L 2994, H01L 29749

Patent

active

060376317

ABSTRACT:
A semiconductor component having a high-voltage endurance edge structure in which a multiplicity of parallel-connected individual components are disposed in a multiplicity of cells of a cell array. In an edge region, the semiconductor component has cells with shaded source zone regions. During commutation of the power semiconductor component, the shaded source zone regions suppress the switching on of a parasitic bipolar transistor caused by the disproportionately large reverse flow current density. Moreover, an edge structure having shaded source zone regions can be produced very easily in technological terms, in particular in the case of self-adjusting processes, and can thus be produced cost-effectively.

REFERENCES:
patent: 5008725 (1991-04-01), Lidow et al.
patent: 5723890 (1998-03-01), Fujihara et al.
patent: 5757046 (1998-05-01), Fujihara et al.

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