Semiconductor component with a channel stop zone

Details Semiconductor component with a channel stop zone Semiconductor component with a channel stop zone

2006-07-06

2009-12-08

Rose, Kiesha L. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

C257S197000, C257S198000, C257S487000, C257S490000, C257S565000, C257SE29027

Reexamination Certificate

active

07629665

ABSTRACT:
A semiconductor component has a semiconductor body (100) having a basic doping and a first and second side, an inner region (103) arranged between the first and second sides, and an edge region (104) adjacent to the inner region in a lateral direction, at least one active component zone (12) which is arranged in the inner region (103) in the region of the first side (101) and is doped complementarily to the basic doping, and a channel stop zone (20), which is arranged in the edge region (104) in the region of the first side (101), is of the same conduction type as the basic doping and is doped more heavily than the basic doping, the doping concentration in the channel stop zone (20) decreasing continuously at least in sections in a lateral direction in the direction of the active component zone (12) at least over a distance (d1) of 10 μm.

REFERENCES:
patent: 4927772 (1990-05-01), Arthur et al.
patent: 5864167 (1999-01-01), Cutter
patent: 6404037 (2002-06-01), Finney
patent: 2003/0127702 (2003-07-01), Blair et al.
patent: 2006/0086991 (2006-04-01), Barthelmess et al.
patent: 10316222 (2003-04-01), None

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