Semiconductor component including plural trench transistors...

Details Semiconductor component including plural trench transistors... Semiconductor component including plural trench transistors...

2007-05-01

2007-05-01

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257S333000, C257S334000

Reexamination Certificate

active

10857353

ABSTRACT:
In the case of the semiconductor component (1) according to the invention, the source regions (S), the body regions (B) and, if appropriate, the body contact regions (Bk) are in each case arranged in mesa regions (M) of adjacent trenches (30). In the edge region (R) of the cell array (Z) the insulation (GOX, FOX) of the underlying trench structures (30) by an insulating oxide layer (FOX) is comparatively thick and formed in the form of a field oxide (FOX) or thick oxide (FOX).

REFERENCES:
patent: 6429481 (2002-08-01), Mo et al.
patent: 6534823 (2003-03-01), Hueting et al.
patent: 6551881 (2003-04-01), Letavic
patent: 19935442 (2000-12-01), None
patent: 10153315 (2003-05-01), None
patent: 1168455 (2002-01-01), None
patent: 0 895 290 (2002-10-01), None
patent: WO 00/42665 (2000-07-01), None

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