Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-08-09
1994-10-04
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257328, 257363, 257335, H01L 2910, H01L 2978
Patent
active
053529154
ABSTRACT:
A semiconductor component (1a) has first and second insulated gate field effect devices (T1 and T2) formed within the same seminconductor body (2). The devices (T1 and T2) have a common first main electrode (D) and an arrangement (20) provides a resistive connection (20b) between a second main electrode (S2)of the second device (T2) and the insulated gate (G1) of the first device (T1). The second device (T2) is formed so as to be more susceptible than the first device (T1) to parasitic bipolar transistor action for causing, when the first and second devices (T1 and T2) are turned off and a voltage exceeding a critical voltage (V.sub.c) is applied to the common first main electrode (D), the parasitic bipolar transistor (B) within the second device (T2) to turn on producing a current for causing, by virtue of the resistive connection (20b) between the second main electrode (S2) of the second device (T2) and the insulated gate (G1) of the first device (T1), the voltage at the insulated gage (G1) of the first device (T1) to alter to cause the device (T1) to turn on. This allows the energy of the overvoltage to be dissipated by conduction of the first insulated gate field effect device to avoid any potentially damaging effects, such as irreversible bipolar breakdown or performance degradation due to hot carrier injection into the gate oxide.
REFERENCES:
patent: 4573066 (1986-02-01), Whight
patent: 4707719 (1987-11-01), Whight
patent: 4767722 (1988-08-01), Blanchard
patent: 4774560 (1988-09-01), Coe
patent: 5072266 (1991-12-01), Bulucea et al.
"A New Vertical Sidewall Channel Power Mosfet With Rectangular Grooves" Ueda et al, Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, 1984, pp. 313-316.
Goodyear Andrew L.
Gough Paul A.
Hutchings Keith M.
Biren Steven R.
Guay John
James Andrew J.
U.S. Philips Corporation
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