Semiconductor component having patterned recombination center me

Details Semiconductor component having patterned recombination center me Semiconductor component having patterned recombination center me

1977-06-02

1978-09-19

Clawson, Jr., Joseph E.

357 38, 357 90, H01L 29167

Patent

active

041157982

ABSTRACT:
A semiconductor component having a semiconductor body having at least two zones of alternate opposite conductivity type in which the concentration of introduced recombination centers is varied between the anode side and the cathode side in such a way that the profile of the recombination centers is not symmetrical. A thyristor is disclosed in which at least the outer anode-side region of the central zone is divided into surface elements having differing levels of concentration of recombination centers, and in which the ratio of the surface elements is set to be such that in the central region the mean value of the concentration of the recombination centers is higher than the cathode-side mean value. Gettering layers are provided which produce this result. Surface elements are provided in the semiconductor body which alter the concentration of recombination centers. The ratio of the areas of the surface elements having a high concentration to those having a low concentration should lie between 0.9:0.1 and 0.1:0.9. The maximum distance between surface elements having a low concentration preferably should be less than the thickness of the semiconductor body.

REFERENCES:
patent: 3317359 (1967-05-01), Engbert
patent: 3419764 (1968-12-01), Kasugai et al.
patent: 3440113 (1969-04-01), Wolley
patent: 3625781 (1971-12-01), Joshi et al.
patent: 3988771 (1976-10-01), Krishna
patent: 3990091 (1976-11-01), Cresswell et al.
patent: 4031607 (1977-06-01), Cline et al.

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