Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-01-20
1996-12-24
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257146, 257147, 257153, 257170, 257171, H01L 2974
Patent
active
055875947
ABSTRACT:
To provide thermal relief, particularly of the edge of disk-shaped gate-turn-off GTO thyristors (GTO) as are used in converters in power electronics, at least one cooling segment which is isolated from a GTO cathode metallization of the GTO thyristor segment (GTO) by a gate electrode metallization of a gate electrode is arranged on the edge and laterally adjacent to the GTO thyristor segment (GTO). An insulation layer is provided between a cooling segment metallization and the gate electrode metallization. Cooling segments in an lo outer annular zone can be alternately arranged with GTO thyristor segments (GTO) or offset towards the outside in the radial direction or perpendicular direction thereto. Instead of cooling segments, a p.sup.+ -type GTO emitter layer of the GTO thyristor segments (GTO) can be shortened at the edge in the outer annular zone. The edge side of these GTO thyristor segments (GTO) can exhibit a shorter charge carrier life than the remaining semiconductor body due to irradiation with electrons, protons or .alpha.-particles, which results in a lower operating current in this area. An ohmic impedance can be connected in series with a diode between a gate electrode and a cathode of the GTO thyristor (GTO) for stabilizing the trigger threshold and reducing its temperature dependence.
REFERENCES:
patent: 4742382 (1988-05-01), Jaecklin
patent: 5210601 (1993-05-01), Kitagawa et al.
patent: 5248622 (1993-09-01), Matsuda et al.
Jaecklin Andre
Ramezani Ezatollah
Roggwiller Peter
Ruegg Andreas
Stockmeier Thomas
ABB Management AG
Tran Minhloan
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