Semiconductor component having a space saving edge structure

Details Semiconductor component having a space saving edge structure Semiconductor component having a space saving edge structure

2007-08-03

2011-12-20

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

C257S329000, C257S330000, C257S331000, C257S332000, C257S340000, C257S341000, C257S488000, C257S489000, C257S490000, C257S491000, C257S492000, C257S493000, C257S494000, C257S495000, C257S496000

Reexamination Certificate

active

08080858

ABSTRACT:
A Semiconductor component having a space saving edge structure is disclosed. One embodiment provides a first side, a second side, an inner region, an edge region adjoining the inner region in a lateral direction of the semiconductor body, and a first semiconductor layer extending across the inner region and the edge region and having a basic doping of a first conductivity type. At least one active component zone of a second conductivity type, which is complementary to the first conductivity type, is disposed in the inner region in the first semiconductor layer. An edge structure is disposed in the edge region and includes at least one trench extending from the first side into the semiconductor body. An edge electrode is disposed in the trench, a dielectric layer is disposed in the trench between the edge electrode and the semiconductor body, a first edge zone of the second conductivity type adjoin the trench and are at least partially disposed below the trench.

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