Semiconductor component having a material reinforced contact...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S298000, C257S306000, C257S751000, C257S758000, C257S767000, C257S768000, C257S907000

Reexamination Certificate

active

06906370

ABSTRACT:
A semiconductor component having a material-reinforced contact area formed of a metal layer is disclosed. The contact area is jointly formed by a second metal area of a first metal layer and a fourth metal area of a second metal layer which is to be contacted. A thickness of the contact area material is at least twice that of a single metal layer and thereby prevents penetrative etching when a hole is created for contacting the metal layer.

REFERENCES:
patent: 4406549 (1983-09-01), Takahashi
patent: 5563762 (1996-10-01), Leung et al.
patent: 5699291 (1997-12-01), Tsunemine
patent: 5707883 (1998-01-01), Tabara
patent: 5847423 (1998-12-01), Yamamichi
patent: 5972788 (1999-10-01), Ryan et al.
patent: 6130449 (2000-10-01), Matsuoka et al.
patent: 6222216 (2001-04-01), Rao et al.
patent: 6239460 (2001-05-01), Kuroiwa et al.
patent: 37 28 979 (1989-03-01), None
patent: 195 28 956 (1997-02-01), None
patent: 196 18 934 (1997-11-01), None
patent: 10-163440 (1998-06-01), None
International Patent Application 96/17386 (Leung), dated Jun. 6, 1996.

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