Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-09-14
1997-03-18
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, 257361, 257362, 361 91, 327389, 327432, H01L 2362
Patent
active
056125623
ABSTRACT:
A semiconductor component for switching an inductive load, comprises first and second external terminals, first and second control terminals and a node. A vertical bipolar transistor has a base region and is disposed between the first external terminal and the node. A first vertical transistor is disposed between the node and the second external terminal. A zener diode and a second vertical transistor are connected parallel between the base and the node.
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Pavlin Antoine
Siaudeau Jean-Louis
Driscoll David M.
Mintel William
Morris James H.
SGS-Thomson Microelectronics S.A.
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