Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-25
1998-12-01
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257339, 257343, 257344, 257352, 257364, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058442723
ABSTRACT:
A high frequency MOS transistor structure with an extended drift region, which modulates the resistance in the drift region of the MOS transistor. The extended gate layer is obtained by an extra semiconductor layer forming a second MOS structure on top of a thin gate oxide layer. The electrical field will then be uniformly distributed laterally in the extended drift region. This design makes it possible to produce a MOS transistor with a short channel length and an extended drift region with low doping concentration and still having very low on-resistance together with a high breakdown voltage.
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Soderbarg, A. et al., "Integration of a Novel High-voltage Giga-Hertz DMOS Transistor into Standard CMOS Process", Proc. IEEE-IEDM-95, pp. 975-978, 1995.
Mena, J.G. et al., "High-voltage Multiple Resistivity Drift Region LDMOS", Solid State Electronics, vol. 29, No. 6, pp. 647-656, 1986.
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Soderbarg Anders
Svedberg Per
Ngo Ngan V.
Telefonaktiebolaet LM Ericsson
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