Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2007-01-08
2008-12-09
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257SE23021, C257SE23008, C257SE21503, C257SE23004, C257SE23069, C257S734000, C257S737000, C257S738000, C257S692000, C257S693000, C257S772000, C257S779000, C438S108000
Reexamination Certificate
active
07462940
ABSTRACT:
A semiconductor component includes flip-chip contacts arranged on a wiring structure of a semiconductor chip. The wiring structure includes at least one metallization layer and at least one dielectric insulation layer made of a low-k material with a relative permittivity εrlower than the relative permittivity of a silicon dioxide. The flip-chip contacts are arranged on contact areas of an upper metallization layer and have a polymer core surrounded by a lead-free solder sheath.
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Bauer Michael
Haimerl Alfred
Kessler Angela
Mahler Joachim
Schober Wolfgang
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Williams Alexander O
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