Semiconductor component comprising an electrostatic-discharge pr

Details Semiconductor component comprising an electrostatic-discharge pr Semiconductor component comprising an electrostatic-discharge pr

1997-07-21

2000-03-21

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257740, 257758, 257774, H01L 2144

Patent

active

060406046

ABSTRACT:
A semiconductor component (10) includes a substrate (11), doped regions (15, 20) in the substrate (11), interconnect layers (23, 26, 29) coupled to one of the doped layers, and dielectric layers (21, 24, 27) between the interconnect layers (23, 26, 29) wherein a portion (48) of the top interconnect layer (29) overlies portions (47, 42, 43) of the underlying interconnect layers (23, 26) and wherein a portion (47) of the middle interconnect layer (26) does not overlie the portions (42, 43) of the bottom interconnect layer (23) and also does not overlie portions (32, 33) of one of the doped regions (20).

REFERENCES:
patent: 4119440 (1978-10-01), Hile
patent: 4471523 (1984-09-01), Hu
patent: 4692190 (1987-09-01), Komatsu
patent: 4910170 (1990-03-01), Motozima et al.
patent: 5807098 (1998-09-01), Fiordalice et al.
patent: 5892249 (1999-04-01), Courtwright et al.
Stanley Wolf, "Silicon Processing for the VLSI Era" vol. 2: Process Integration, 1990, pp. 441-446.

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