Semiconductor component arrangement having a component with...

Details Semiconductor component arrangement having a component with... Semiconductor component arrangement having a component with...

2008-06-27

2010-11-09

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S341000, C257S209000, C257SE29183

Reexamination Certificate

active

07829940

ABSTRACT:
Disclosed is a semiconductor including a component having a drift zone and a drift control zone. A first connection zone is adjacent to the drift zone and is doped more highly than the drift zone. A drift control zone is arranged adjacent to the drift zone and is coupled to the first connection zone. A drift control zone is dielectric arranged between the drift zone and the drift control zone. At least one rectifier element is arranged between the first connection zone and the drift control zone. A charging circuit is connected to the drift control zone.

REFERENCES:
patent: 2002/0060340 (2002-05-01), Deboy et al.
patent: 2002/0158304 (2002-10-01), Haupt et al.
patent: 2005/0186705 (2005-08-01), Jackson et al.
patent: 2007/0023830 (2007-02-01), Pfirsch et al.

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