Semiconductor component and method of manufacturing

Details Semiconductor component and method of manufacturing Semiconductor component and method of manufacturing

2007-04-17

2007-04-17

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257SE29197, C257SE29201, C257SE29260

Reexamination Certificate

active

10842393

ABSTRACT:
A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.

REFERENCES:
patent: 5341011 (1994-08-01), Hshieh et al.
patent: 6037628 (2000-03-01), Huang
patent: 6184555 (2001-02-01), Tihanyi et al.
patent: 6608350 (2003-08-01), Kinzer et al.
patent: 6653740 (2003-11-01), Kinzer et al.

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