Semiconductor component and method of manufacture

Details Semiconductor component and method of manufacture Semiconductor component and method of manufacture

2005-08-23

2005-08-23

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Mosfet type gate sidewall insulating spacer

Reexamination Certificate

active

06933620

ABSTRACT:
An insulated gate semiconductor device (100) having reduced gate resistance and a method for manufacturing the semiconductor device (100). A gate structure (112) is formed on a major surface (104) of a semiconductor substrate (102). Successive nitride spacers (118, 128) are formed adjacent the sidewalls of the gate structure (112). The nitride spacers (118, 128) are etched and recessed using a single etch to expose the upper portions (115A,117A) of the gate structure (112). Source (132) and drain (134) regions are formed in the semiconductor substrate (102). Silicide regions (140, 142, 144) are formed on the top surface (109) and the exposed upper portions (115A,117A) of the gate structure (112) and the source region (132) and the drain region (134). Electrodes (150, 152, 154) are formed in contact with the silicide (140, 142, 144) of the respective gate structure (112), source region (132), and the drain region (134).

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