Semiconductor component and method of manufacture

Details Semiconductor component and method of manufacture Semiconductor component and method of manufacture

2005-09-13

2005-09-13

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S761000

Reexamination Certificate

active

06943096

ABSTRACT:
A semiconductor component having a metallization system that includes a multi-metal seed layer and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a lower level interconnect. A hardmask is formed over the dielectric layer and an opening is etched through the hardmask into the dielectric layer. The opening is lined with a thin conformal barrier material. A plurality of metal oxide layers are formed over the conformal barrier material. The plurality of metal oxide layers are reduced by heat treatment to form a multi-metal seed layer. An electrically conductive material is formed over the multi-metal seed layer.

REFERENCES:
patent: 6037258 (2000-03-01), Liu et al.
patent: 6320244 (2001-11-01), Alers et al.
patent: 6534865 (2003-03-01), Lopatin et al.
patent: 6753249 (2004-06-01), Chen et al.

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