Semiconductor component and method of manufacture

Details Semiconductor component and method of manufacture Semiconductor component and method of manufacture

1998-06-10

2000-02-01

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257408, H01L 2978

Patent

active

06020611&

ABSTRACT:
A semiconductor component includes a substrate (101), an electrode (105) located over the substrate (101), a heavily doped region (542) located in the substrate (101) and self-aligned to the electrode (105), an other heavily doped region (543) located in the substrate (101), a lightly doped region (422) located in the substrate (101) between the heavily doped regions (542, 543) and self-aligned to the electrode (105), and another lightly doped region (432) located in the substrate (101) between the lightly doped region (422) and the other heavily doped region (543).

REFERENCES:
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patent: 3988761 (1976-10-01), Kanazawa
patent: 4818715 (1989-04-01), Chao
patent: 5217913 (1993-06-01), Watabe et al.
patent: 5371394 (1994-12-01), Ma et al.
patent: 5386136 (1995-01-01), Williams et al.
patent: 5451807 (1995-09-01), Fujita
patent: 5552329 (1996-09-01), Kim et al.
patent: 5719425 (1998-02-01), Akram et al.
S. Ogura et al, "A Half Micron Mosfet Using Double Implanted LDD" IEDM 82, Section 29.6, May 1982, pp. 718-721.

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