Semiconductor component and method for producing it

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S327000, C257S334000, C257S409000, C257SE29040, C257SE29133

Reexamination Certificate

active

07446373

ABSTRACT:
A semiconductor component and also a method for producing it are disclosed. In one embodiment, the semiconductor component includes a surface region or a modified doping region is provided alternatively or simultaneously in the edge region of the cell array, in which surface region or modified doping region the doping concentration is lowered and/or in which surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.

REFERENCES:
patent: 5168331 (1992-12-01), Yilmaz
patent: 5233215 (1993-08-01), Baliga
patent: 5488236 (1996-01-01), Baliga et al.
patent: 5998833 (1999-12-01), Baliga
patent: 6258658 (2001-07-01), Bohm et al.
patent: 6262453 (2001-07-01), Hshieh
patent: 6388286 (2002-05-01), Baliga
patent: 6429481 (2002-08-01), Mo et al.
patent: 6690062 (2004-02-01), Henninger et al.
patent: 6855986 (2005-02-01), Hsieh et al.
patent: 2003/0209757 (2003-11-01), Henninger etal.
patent: 10061310 (2002-06-01), None
patent: 0722189 (1996-07-01), None
patent: WO 03/023862 (2003-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor component and method for producing it does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor component and method for producing it, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component and method for producing it will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4044104

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.