Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-09-10
2008-11-04
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S334000, C257S409000, C257SE29040, C257SE29133
Reexamination Certificate
active
07446373
ABSTRACT:
A semiconductor component and also a method for producing it are disclosed. In one embodiment, the semiconductor component includes a surface region or a modified doping region is provided alternatively or simultaneously in the edge region of the cell array, in which surface region or modified doping region the doping concentration is lowered and/or in which surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.
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Hirler Franz
Kotz Dietmar
Peri Hermann
Willmeroth Armin
Zelsacher Rudolf
Dicke Billig & Czaja, PLLC
Erdem Fazli
Infineon - Technologies AG
Purvis Sue A.
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