Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-04
2011-01-04
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27060, C257SE21616, C438S270000
Reexamination Certificate
active
07863680
ABSTRACT:
A semiconductor component includes a surface region. A modified doping region is provided in the edge region of the cell array. In the surface region or modified doping region the doping concentration is lowered and/or in the surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.
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Hirler Franz
Kotz Dietmar
Peri Hermann
Willmeroth Armin
Zelsacher Rudolf
Dicke Billig & Czaja, PLLC
Dickey Thomas L
Erdem Fazli
Infineon - Technologies AG
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