Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-05
2011-07-05
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S401000, C257SE21388
Reexamination Certificate
active
07973362
ABSTRACT:
A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Nsof charge carriers present in a volume Vsbetween two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Npof charge carriers present in a volume Vpbetween two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Nsholds true.
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Rueb Michael
Schmitt Markus
Tolksdorf Carolin
Willmeroth Armin
Dicke Billig & Czaja, PLLC
Gurley Lynne A
Infineon Technologies Austria AG
Yushina Galina
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