Semiconductor component and interconnect having conductive...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor

Reexamination Certificate

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C257S698000, C257S774000, C257S773000, C257S686000

Reexamination Certificate

active

06903443

ABSTRACT:
A method for fabricating semiconductor components and interconnects includes the steps of providing a substrate, such as a semiconductor die, forming external contacts on opposing sides of the substrate by laser drilling vias through the substrate, and forming conductive members in the vias. The conductive members include enlarged terminal portions that are covered with a non-oxidizing metal. The method can be used to fabricate stackable semiconductor packages having integrated circuits in electrical communication with the external contacts. The method can also be used to fabricate interconnects for electrically engaging packages, dice and wafers for testing or for constructing electronic assemblies.

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“Forming Electrical Interconnections Through Semiconductor Wafers”, T. R. Anthony, American Institute of Physics, 1981, pp. 5340-5349.

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