Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2005-06-07
2005-06-07
Thai, Luan (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S698000, C257S774000, C257S773000, C257S686000
Reexamination Certificate
active
06903443
ABSTRACT:
A method for fabricating semiconductor components and interconnects includes the steps of providing a substrate, such as a semiconductor die, forming external contacts on opposing sides of the substrate by laser drilling vias through the substrate, and forming conductive members in the vias. The conductive members include enlarged terminal portions that are covered with a non-oxidizing metal. The method can be used to fabricate stackable semiconductor packages having integrated circuits in electrical communication with the external contacts. The method can also be used to fabricate interconnects for electrically engaging packages, dice and wafers for testing or for constructing electronic assemblies.
REFERENCES:
patent: 5046239 (1991-09-01), Miller et al.
patent: 5063177 (1991-11-01), Geller et al.
patent: 5172050 (1992-12-01), Swapp
patent: 5229647 (1993-07-01), Gnadinger
patent: 5236551 (1993-08-01), Pan
patent: 5249450 (1993-10-01), Wood et al.
patent: 5277787 (1994-01-01), Otani et al.
patent: 5404044 (1995-04-01), Booth et al.
patent: 5420520 (1995-05-01), Anschel et al.
patent: 5426072 (1995-06-01), Finnila
patent: 5473120 (1995-12-01), Ito et al.
patent: 5483741 (1996-01-01), Akram et al.
patent: 5484647 (1996-01-01), Nakatani et al.
patent: 5487999 (1996-01-01), Farnworth
patent: 5528080 (1996-06-01), Goldstein
patent: 5541525 (1996-07-01), Wood et al.
patent: 5557844 (1996-09-01), Bhatt et al.
patent: 5578526 (1996-11-01), Akram et al.
patent: 5592736 (1997-01-01), Akram et al.
patent: 5607818 (1997-03-01), Akram et al.
patent: 5633122 (1997-05-01), Tuttle
patent: 5634267 (1997-06-01), Farnworth et al.
patent: 5674785 (1997-10-01), Akram et al.
patent: 5686317 (1997-11-01), Akram et al.
patent: 5716218 (1998-02-01), Farnworth et al.
patent: 5781022 (1998-07-01), Wood et al.
patent: 5783461 (1998-07-01), Hembree
patent: 5783865 (1998-07-01), Higashiguchi et al.
patent: 5796590 (1998-08-01), Klein
patent: 5801452 (1998-09-01), Farnworth et al.
patent: 5815000 (1998-09-01), Farnworth et al.
patent: 5834945 (1998-11-01), Akram
patent: 5876580 (1999-03-01), Lykins
patent: 5878485 (1999-03-01), Wood et al.
patent: 5896036 (1999-04-01), Wood et al.
patent: 5915977 (1999-06-01), Hembree et al.
patent: 5929647 (1999-07-01), Akram et al.
patent: 5931685 (1999-08-01), Hembree et al.
patent: 5936847 (1999-08-01), Kazle
patent: 5952840 (1999-09-01), Farnworth et al.
patent: 5962921 (1999-10-01), Farnworth et al.
patent: 6013948 (2000-01-01), Akram et al.
patent: 6040702 (2000-03-01), Hembree et al.
patent: 6107109 (2000-08-01), Akram et al.
patent: 6107119 (2000-08-01), Farnworth et al.
patent: 6114240 (2000-09-01), Akram et al.
patent: 6162997 (2000-12-01), Memis
patent: 6236115 (2001-05-01), Gaynes et al.
patent: 6294837 (2001-09-01), Akram et al.
patent: 6353328 (2002-03-01), Akram et al.
patent: 6356098 (2002-03-01), Akram et al.
patent: 6362637 (2002-03-01), Farnworth et al.
patent: 6400172 (2002-06-01), Akram et al.
patent: 6417685 (2002-07-01), Akram et al.
patent: 6437591 (2002-08-01), Farnworth et al.
patent: 6451624 (2002-09-01), Farnworth et al.
patent: 6620731 (2003-09-01), Farnworth et al.
“Forming Electrical Interconnections Through Semiconductor Wafers”, T. R. Anthony, American Institute of Physics, 1981, pp. 5340-5349.
Farnworth Warren M.
Hembree David R.
Wood Alan G.
Gratton Stephen A.
Micro)n Technology, Inc.
Thai Luan
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