Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-15
2006-08-15
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S163000, C427S466000
Reexamination Certificate
active
07091073
ABSTRACT:
In contrast to conventional semiconductor components formed on a silicon substrate, the present invention aims at providing a transistor component functioning as a semiconductor component by being placed on an insulating substrate made of plastic and the like. The transistor component according to the present invention comprises a silicon grain100A with a drain area402and a source area401formed via a channel area403, an oxidation film101covering the surface of the silicon grain100A, a gate electrode300A connecting with the channel area403via the oxidation film101, and a drain electrode200A electrically connecting with the drain area402, and a source electrode400A electrically connecting with the source area401.
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Oliff and Berridge, PLC
Seiko Epson Corporation
Thomas Toniae M.
Wilczewski Mary
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