Semiconductor component, active matrix substrate for a...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S163000, C427S466000

Reexamination Certificate

active

07091073

ABSTRACT:
In contrast to conventional semiconductor components formed on a silicon substrate, the present invention aims at providing a transistor component functioning as a semiconductor component by being placed on an insulating substrate made of plastic and the like. The transistor component according to the present invention comprises a silicon grain100A with a drain area402and a source area401formed via a channel area403, an oxidation film101covering the surface of the silicon grain100A, a gate electrode300A connecting with the channel area403via the oxidation film101, and a drain electrode200A electrically connecting with the drain area402, and a source electrode400A electrically connecting with the source area401.

REFERENCES:
patent: 3649354 (1972-03-01), Te Velde
patent: 4470060 (1984-09-01), Yamazaki
patent: 5499124 (1996-03-01), Vu et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5847413 (1998-12-01), Yamazaki et al.
patent: 5949102 (1999-09-01), Saida et al.
patent: 6013922 (2000-01-01), Ueda et al.
patent: 6038004 (2000-03-01), Nanno et al.
patent: 6232561 (2001-05-01), Schmidt et al.
patent: 2003/0040164 (2003-02-01), Inoue et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor component, active matrix substrate for a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor component, active matrix substrate for a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component, active matrix substrate for a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3625221

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.