Semiconductor component

Details Semiconductor component Semiconductor component

2010-06-01

2011-10-11

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S510000, C257SE29257

Reexamination Certificate

active

08035161

ABSTRACT:
A semiconductor component resistant to the formation of a parasitic bipolar transistor and a method for manufacturing the semiconductor component using a reduced number of masking steps. A semiconductor material of N-type conductivity having a region of P-type conductivity is provided. A doped region of N-type conductivity is formed in the region of P-type conductivity. Trenches are formed in a semiconductor material and extend through the regions of N-type and P-type conductivities. A field oxide is formed from the semiconductor material such that portions of the trenches extend under the field oxide. The field oxide serves as an implant mask in the formation of source regions. Body contact regions are formed from the semiconductor material and an electrical conductor is formed in contact with the source and body regions. An electrical conductor is formed in contact with the backside of the semiconductor material.

REFERENCES:
patent: 6309929 (2001-10-01), Hsu et al.
patent: 6855986 (2005-02-01), Hsieh et al.
patent: 2003/0042556 (2003-03-01), Gajda et al.
patent: 2005/0199952 (2005-09-01), Hsieh et al.
Webster's New Collegiate Dictionary, G. & C. Merriam Co., 1973, p. 1274.
Merriam-Webster OnLine, http://www.merriam-webster.com/, accessed on Jan. 15, 2010. Pages showing the definition of the word “under” as a preposition and as an adverb.

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