Semiconductor CMOS SOI

Details Semiconductor CMOS SOI Semiconductor CMOS SOI

2005-12-13

2005-12-13

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S338000, C257S350000

Reexamination Certificate

active

06975003

ABSTRACT:
An N-channel transistor includes: an N-type source region, a gate electrode, a P-type body region, an N-type drain offset region, and a drain contact region, which is an N-type drain region. The transistor further includes a gate insulating film that has a thin oxide silicon film (a thin film portion) and a LOCOS film (a thick film portion). The body region has an impurity profile in which the concentration reaches a maximum value near the surface and decreases with distance from the surface. The drain offset region has an impurity profile that has an impurity-concentration peak in a deep portion located a certain depth-extent below the lower face of the LOCOS film.

REFERENCES:
patent: 5929493 (1999-07-01), Wu
patent: 6313508 (2001-11-01), Kobayashi

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