Semiconductor circuit with reduced P-N junction capacitance

Details Semiconductor circuit with reduced P-N junction capacitance Semiconductor circuit with reduced P-N junction capacitance

1996-04-11

1998-05-12

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257398, 257399, 257400, H01L 2968

Patent

active

057510474

ABSTRACT:
The semiconductor device according to the present invention includes a semiconductor substrate of a first conductive type. A well area of the first conductive type is formed in the substrate. The well area has higher concentration of impurity than that of the substrate. The well area includes a first element. The first element is of a second conductive type different from the first conductive type. A second element of the second conductive type formed in the substrate. The first element is isolated from the second element by a field oxide.

REFERENCES:
patent: 4700212 (1987-10-01), Okazawa
patent: 4889820 (1989-12-01), Mori
patent: 5169792 (1992-12-01), Katoh et al.

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