Semiconductor circuit including a long channel device and a...

Details Semiconductor circuit including a long channel device and a... Semiconductor circuit including a long channel device and a...

2011-02-01

2011-02-01

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C438S283000

Reexamination Certificate

active

07880236

ABSTRACT:
A semiconductor circuit is provided that includes a short channel device, and a long channel device that is electrically isolated from the short channel device. The long channel device comprises a plurality of first gate electrodes, a first source region adjacent one of the plurality of first gate electrodes, a first drain region adjacent another of the plurality of first gate electrodes, and a plurality of common source/drain regions positioned between adjacent ones of the plurality of first gate electrodes. The first gate electrodes each overlie portions of a layer of high-dielectric constant (k) gate insulator material. Each of the first gate electrodes are electrically coupled to at least one of the other first gate electrodes.

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Guha et al., “Oxygen Vacancies in High Dielectric Constant Oxide-Semiconductor Films,” The American Physical Sockiey, Physical Review Letters, week ending May 11, 2007, pp. 196101-1-196101-4.

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