Semiconductor circuit for electro-optical device and method of m

Details Semiconductor circuit for electro-optical device and method of m Semiconductor circuit for electro-optical device and method of m

1996-12-18

1999-01-12

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

117 8, M01L 2100

Patent

active

058588230

ABSTRACT:
In a monolithic active matrix circuit formed on a substrate, the active regions of at least a part of the thin film transistors (TFTs) constituting the peripheral circuit for driving the matrix region are added with a metal element for promoting the crystallization of silicon at a concentration of 1.times.10.sup.16 to 5.times.1019 cm.sup.-3, no metal element is added to the active region of the TFTs for the matrix region. The channel forming regions of at least a part of the TFTs constituting the peripheral circuit and the channel forming regions of the TFTs for the matrix region are formed by a silicon semiconductor thin film having a monodomain structure.

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