Semiconductor circuit for DC-DC converter

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C323S282000, C327S543000, C257SE27011

Reexamination Certificate

active

11034884

ABSTRACT:
In a semiconductor integrated circuit for a DC—DC converter, an nMOS-type transistor Qn of a CMOS inverter1cconstituting a driver1is electrically floated from a substrate12through an n-type well region11. Thus, the nMOS-type transistor Qn is electrically insulated from other transistors such as an npn-type transistor Q1and an L-pnp-type transistor Q2constituting a feedback control system9through the n-type well region11. Stable operation is performed with a minute current without producing a malfunction caused by the influence of a parasitic current, even if the drain potential of an nMOS-type transistor is reduced to the ground potential or lower at the time of switching by a driver constituted from a CMOS inverter, to facilitate lower power consumption and higher efficiency, and also to eliminate a constraint on layout design of components.

REFERENCES:
patent: 5616945 (1997-04-01), Williams
patent: 2001-43690 (2001-02-01), None

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