Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-03
2007-07-03
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C323S282000, C327S543000, C257SE27011
Reexamination Certificate
active
11034884
ABSTRACT:
In a semiconductor integrated circuit for a DC—DC converter, an nMOS-type transistor Qn of a CMOS inverter1cconstituting a driver1is electrically floated from a substrate12through an n-type well region11. Thus, the nMOS-type transistor Qn is electrically insulated from other transistors such as an npn-type transistor Q1and an L-pnp-type transistor Q2constituting a feedback control system9through the n-type well region11. Stable operation is performed with a minute current without producing a malfunction caused by the influence of a parasitic current, even if the drain potential of an nMOS-type transistor is reduced to the ground potential or lower at the time of switching by a driver constituted from a CMOS inverter, to facilitate lower power consumption and higher efficiency, and also to eliminate a constraint on layout design of components.
REFERENCES:
patent: 5616945 (1997-04-01), Williams
patent: 2001-43690 (2001-02-01), None
Komori Yuri
Mitsui Kazuo
NEC Electronics Corporation
Young & Thompson
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