Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-06
2006-06-06
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S467000
Reexamination Certificate
active
07057240
ABSTRACT:
A semiconductor circuit configuration is described, in particular for ignition applications, having a semiconductor power switching device which has a first main terminal, a second main terminal and a control terminal; a clamping diode device which is switched between the first main terminal and the control terminal for clamping an external voltage (VA) which is applied at the first main terminal; the clamping diode device having a first part with a first clamp voltage and a second part with a second clamp voltage (VKL′), the second part being connected in series with the first part; a controllable semiconductor switching device which is connected in parallel with the first part for controllable bridging of the first part, so that either the sum (VKL) of the first and the second clamp voltages, or the second clamp voltage (VKL′) is provided for clamping the external voltage (VA) applied at the first main terminal; and a control circuit for controlling the controllable semiconductor switching device as a function of a predetermined operating state of the semiconductor power switching device.
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Feiler Wolfgang
Meinders Horst
Topp Rainer
Kenyon & Kenyon
Ngo Ngan V.
Robert & Bosch GmbH
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